Precise determination of thermal expansion coefficients observed in 4H-SiC single crystals

Materials Science Forum

Volumn 527-529, Issue PART 1, 2006, Pages 699-702

  Nakabayashi, M ^a   Fujimoto, T ^a   Katsuno, M ^a   Ohtani, N ^a  

^a NIPPON STEEL CORPORATION   (Japan)

Author keywords

Coefficient of thermal expansion; Crystal axis directions

Indexed keywords

EPITAXIAL GROWTH; LASER INTERFEROMETRY; SILICON CARBIDE; STRESS CONCENTRATION; THERMAL EXPANSION; THIN FILMS;

CRYSTAL AXIS DIRECTIONS; CRYSTAL VOLUME; TEMPERATURE DEPENDENT VARIATION;

SINGLE CRYSTALS;

EID: 37849023738     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.699     Document Type: Conference Paper

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