Lateral enlargement of silicon carbide crystals

Materials Science Forum

Volumn 389-393, Issue 1, 2002, Pages 39-42

  Jacobson, H ^a   Yakimova, R ^a   Raback P ^b   Syvajarvi M ^a   Birch, J ^a   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b AALTO UNIVERSITY   (Finland)

Author keywords

4H SiC; 6H SiC; Lateral growth

Indexed keywords

COMPUTER SIMULATION; CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); SINGLE CRYSTALS; SUBLIMATION; SYNCHROTRON RADIATION; THERMAL GRADIENTS; SCREW DISLOCATIONS; SILICON WAFERS;

LATERAL GROWTH; MICROPIPES; SILICON CARBIDE WAFER; SUBLIMATION GROWTH; SYNCHROTRON WHITE BEAM X RAY TOPOGRAPHS; 4H SILICON CARBIDE; 4H-SIC; 6H-SIC; 6H-SILICON CARBIDES; LATERAL ENLARGEMENTS; SILICON CARBIDE CRYSTALS;

SILICON CARBIDE;

EID: 8744267835     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Article

References (4)

1. P. Råback, R. Nieminen, R. Yakimova, M. Tuominen, and E. Janzén, Mat. Sci. Forum, 264-268:65-68, 1988
2. T. Kimoto, Doctoral thesis: Step - Controlled Epitaxy Growth of α - SiC and Device applications, Kyoto University, (1995)
3. "The Theory of Transformations in Metals and Alloys", Second Edition, Part I, Pergamon, Oxford, 1975, p.153
4. M. Dudley, S. Wang, W. Huang, C.H. Carter Jr., V.F. Tsvetkov and C. Fazi, J. Phys. D.: Appl. Phys. 28pp (1995), p. A63.