Effect of oxygen to argon ratio on properties of (Ba,Sr)TiO3 thin films prepared on LaNiO3 /Si substrates

Journal of Applied Physics

Volumn 105, Issue 6, 2009, Pages

  Shen, Hong ^a   Gao, Yanhong ^a   Zhou, Peng ^b   Ma, Jianhua ^a   Sun, Jinglan ^a   Meng, Xiangjian ^a   Chu, Junhao ^a  

^a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

^b FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BST FILMS; CRYSTALLINITY; DIELECTRIC CONSTANTS; EFFECT OF OXYGENS; FIGURE OF MERITS; LEAKAGE CURRENT DENSITIES; MAXIMUM VALUES; MINIMUM VALUES; MIXING RATIOS; OXYGEN FLOWS; RF- MAGNETRON SPUTTERING; SI SUBSTRATES; STRESS EFFECTS;

ARGON; BARIUM; CERAMIC CAPACITORS; DIELECTRIC WAVEGUIDES; ELECTRODEPOSITION; LEAKAGE (FLUID); MAGNETRON SPUTTERING; OXYGEN; PERMITTIVITY; SEMICONDUCTING SILICON COMPOUNDS; THIN FILMS;

OXYGEN VACANCIES;

EID: 63749113451     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3076893     Document Type: Article

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