Low-temperature nonthermal population of InAs-GaAs quantum dots

IEEE Journal of Quantum Electronics

Volumn 45, Issue 4, 2009, Pages 380-387

  O'Driscoll, Ian ^a   Smowton, Peter M ^a   Blood, Peter ^a  

^a CARDIFF UNIVERSITY   (United Kingdom)

Author keywords

Quantum dots (QDs); Semiconductor devices; Semiconductor lasers

Indexed keywords

ELECTRIC CONDUCTIVITY; EMISSION SPECTROSCOPY; HETEROJUNCTIONS; INDIUM ARSENIDE; LASERS; POPULATION STATISTICS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR LASERS; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR SWITCHES; SPONTANEOUS EMISSION;

GAAS; INAS; INHOMOGENEOUS DISTRIBUTIONS; INHOMOGENEOUS ENSEMBLES; LOW TEMPERATURES; NON THERMALS; QUANTUM DOTS (QDS); RECOMBINATION PROCESS; SIMULTANEOUS MEASUREMENTS; SPONTANEOUS EMISSION SPECTRUM;

SEMICONDUCTOR QUANTUM DOTS;

EID: 63649117040     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2009.2013869     Document Type: Article

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