Study on temperature dependent resistivity of indium-doped cadmium zinc telluride

Journal of Physics D: Applied Physics

Volumn 42, Issue 3, 2009, Pages

  Xu, Yadong ^a,b   Jie, Wanqi ^a   Sellin, Pall ^b   Wang, Tao ^a   Liu, Weihua ^a   Zha, Gangqiang ^a   Veeramani, Perumal ^b   Mills, Chris ^b  

^a NORTHWESTERN POLYTECHNICAL UNIVERSITY   (China)

^b UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CADMIUM; CADMIUM ALLOYS; CADMIUM COMPOUNDS; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRON MOBILITY; FERMI LEVEL; FERMIONS; INDIUM; ZINC;

CADMIUM ZINC TELLURIDES; CDZNTE CRYSTALS; CHARGE TRANSPORTS; DEEP-LEVEL DEFECTS; DOPANT CONCENTRATIONS; DOPING LEVELS; HIGH RESISTIVITIES; HIGH-RESISTIVITY SAMPLES; LOW RESISTIVITIES; MODIFIED VERTICAL BRIDGMAN METHODS; NEGATIVE BIAS; TEMPERATURE-DEPENDENT RESISTIVITIES;

DOPING (ADDITIVES);

EID: 63649112879     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/3/035105     Document Type: Article

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