A modified vertical bridgman method for growth of high-quality Cd 1-xZrxTe crystals

Journal of Electronic Materials

Volumn 34, Issue 9, 2005, Pages 1215-1224

  Li, Guoqiang ^a   Zhang, Xiaolu ^b   Hua, Hui ^a   Jie, Wanqi ^a  

^a NORTHWESTERN POLYTECHNICAL UNIVERSITY   (China)

^b NORTHWESTERN POLYTECHNICAL UNIVERSITY   (China)

Author keywords

Compound semiconductors; Crystal growth; Dislocation; Electrical resistivity; Optical transmission

Indexed keywords

CADMIUM COMPOUNDS; CONCENTRATION (PROCESS); CRYSTALS; DISLOCATIONS (CRYSTALS); ELECTRIC CONDUCTIVITY; EVAPORATION; LIGHT TRANSMISSION; OPTOELECTRONIC DEVICES; RAW MATERIALS; ZINC COMPOUNDS;

BRIDGMAN METHOD; COMPOUND SEMICONDUCTORS; CRYSTAL QUALITY; ELECTRICAL CHARACTERIZATION;

EPITAXIAL GROWTH;

EID: 25444523815     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-005-0266-3     Document Type: Article

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