Gallium-assisted deoxidation of patterned substrates for site-controlled growth of InAs quantum dots

Journal of Crystal Growth

Volumn 311, Issue 7, 2009, Pages 1815-1818

  Atkinson, P ^a   Schmidt, O G ^b  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b IFW DRESDEN   (Germany)

Author keywords

A1. Atomic force microscopy; A1. Surface processes; A3. Molecular beam epitaxy; B2. Semiconducting III V materials

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; EPITAXIAL GROWTH; GALLIUM ALLOYS; HYDROGEN; INDIUM ARSENIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; SEMICONDUCTING INDIUM; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WIRES; SURFACES;

A1. ATOMIC FORCE MICROSCOPY; A1. SURFACE PROCESSES; A3. MOLECULAR BEAM EPITAXY; B2. SEMICONDUCTING III-V MATERIALS; CONTROLLED GROWTHS; DE OXIDATIONS; ELECTRON-BEAM; EX-SITU; GAAS(1 0 0); IN-SITU; INAS QUANTUM DOTS; NUCLEATION SITES; PATTERNED SUBSTRATES; SUBSTRATE TEMPERATURES; SURFACE OXIDES;

SUBSTRATES;

EID: 63549149573     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.09.024     Document Type: Article

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