Molecular beam epitaxial growth of site-controlled InAs quantum dots on pre-patterned GaAs substrates

Microelectronics Journal

Volumn 37, Issue 12, 2006, Pages 1436-1439

  Atkinson, P ^a   Bremner, S P ^a   Anderson, D ^a   Jones, G A C ^a   Ritchie, D A ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

Indium arsenide; Molecular beam epitaxy; Quantum dot

Indexed keywords

EPITAXIAL GROWTH; ETCHING; LITHOGRAPHY; MOLECULAR BEAM EPITAXY; NUCLEATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

BUFFER LAYERS; INDIUM ARSENIDE; PREFERENTIAL NUCLEATION; WET ETCHING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33750741929     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2006.05.003     Document Type: Article

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