Site control of InAs quantum dot nucleation by ex situ electron-beam lithographic patterning of GaAs substrates

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 32, Issue 1-2 SPEC. ISS., 2006, Pages 21-24

  Atkinson, P ^a   Ward, M B ^b   Bremner, S P ^a   Anderson, D ^a   Farrow, T ^b   Jones, G A C ^a   Shields, A J ^b   Ritchie, D A ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b TOSHIBA CORPORATION   (Japan)

Author keywords

Atomic force microscopy; Molecular beam epitaxy; Quantum dot

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRON BEAM LITHOGRAPHY; MOLECULAR BEAM EPITAXY; NUCLEATION; REACTIVE ION ETCHING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES;

QUANTUM DOT NUCLEATION; SINGLE DOT OCCUPANCY; SITE CONTROLLED DOTS; SUBSTRATE PATTERNING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33747889714     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2005.12.007     Document Type: Article

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