Direct imaging of GaN p-n junction by cross-sectional scanning photoelectron microscopy and spectroscopy

Applied Physics Letters

Volumn 94, Issue 12, 2009, Pages

  Kuo, Cheng Tai ^a   Lee, Hong Mao ^a   Shiu, Hung Wei ^a,b   Chen, Chia Hao ^b   Gwo, Shangjr ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ALLOYS; GALLIUM NITRIDE; PHOTOELECTRON SPECTROSCOPY; PHOTOIONIZATION; PHOTONS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR GROWTH; SURFACE PROPERTIES; X RAY LITHOGRAPHY; X RAY PHOTOELECTRON SPECTROSCOPY;

A PLANES; AS-GROWN; CLEAVAGE SURFACES; CROSS-SECTIONAL GEOMETRIES; CROSS-SECTIONAL SCANNING; DIRECT IMAGING; DOPING LAYERS; FLATBAND CONDITIONS; III-NITRIDE SEMICONDUCTORS; IN-SITU; NON-POLAR; P-N JUNCTIONS; POLAR GROWTHS; POLAR SURFACES; SOFT X-RAYS;

SEMICONDUCTOR JUNCTIONS;

EID: 63549138608     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3109778     Document Type: Article

References (17)

1. H. Amano, M. Kito, K. Hiramatsu, and I. Akasaki, Jpn. J. Appl. Phys., Part 2 0021-4922 10.1143/JJAP.28.L2112 28, L2112 (1989).
2. S. Nakamura, N. Iwasa, M. Senoh, and T. Mukai, Jpn. J. Appl. Phys., Part 1 0021-4922 10.1143/JJAP.31.1258 31, 1258 (1992).
3. S. Nakamura, T. Mukai, and M. Senoh, Appl. Phys. Lett. 0003-6951 10.1063/1.111832 64, 1687 (1994).
4. R. E. Jones, K. M. Yu, S. X. Li, W. Walukiewicz, J. W. Ager, E. E. Haller, H. Lu, and W. J. Schaff, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett. 96.125505 96, 125505 (2006).
5. C. -L. Wu, H. -M. Lee, C. -T. Kuo, C. -H. Chen, and S. Gwo, Appl. Phys. Lett. 0003-6951 10.1063/1.2913204 92, 162106 (2008).
6. C. -L. Wu, H. -M. Lee, C. -T. Kuo, C. -H. Chen, and S. Gwo, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.101.106803 101, 106803 (2008).
7. D. Segev and C. G. Van de Walle, Europhys. Lett. 0295-5075 10.1209/epl/i2006-10250-2 76, 305 (2006).
8. C. G. Van de Walle and D. Segev, J. Appl. Phys. 0021-8979 10.1063/1.2722731 101, 081704 (2007).
9. J. E. Northrup and J. Neugebauer, Phys. Rev. B 0163-1829 10.1103/PhysRevB.53.R10477 53, R10477 (1996).
10. L. Ivanova, S. Borisova, H. Eisele, M. Dähne, A. Laubsch, and Ph. Ebert, Appl. Phys. Lett. 0003-6951 10.1063/1.3026743 93, 192110 (2008).
11. C. -L. Wu, J. -C. Wang, M. -H. Chan, T. T. Chen, and S. Gwo, Appl. Phys. Lett. 0003-6951 10.1063/1.1629384 83, 4530 (2003).
12. C. -L. Wu, H. -M. Lee, C. -T. Kuo, S. Gwo, and C. -H. Hsu, Appl. Phys. Lett. 0003-6951 10.1063/1.2764448 91, 042112 (2007).
13. K. M. Tracy, W. J. Mecouch, R. F. Davis, and R. J. Nemanich, J. Appl. Phys. 0021-8979 10.1063/1.1596369 94, 3163 (2003).
14. E. Calleja, M. A. Sánchez-García, D. Basak, F. J. Sánchez, F. Calle, P. Youinou, E. Muoz, J. J. Serrano, J. M. Blanco, C. Villar, T. Laine, J. Oila, K. Saarinen, P. Hautojärvi, C. H. Molloy, D. J. Somerford, and I. Harrison, Phys. Rev. B 0163-1829 10.1103/PhysRevB.58.1550 58, 1550 (1998).
15. M. Kočan, A. Rizzi, H. Lüth, S. Keller, and U. K. Mishra, Phys. Status Solidi B 0370-1972 10.1002/1521-3951(200212)234:3<773::AID- PSSB773>3.0.CO;2-0 234, 773 (2002).
16. W. Walukiewicz, Physica B 302-303, 123 (2001).
17. C. G. Van de Walle and J. Neugebauer, Nature (London) 0028-0836 10.1038/nature01665 423, 626 (2003).