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Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion

Volumn B, Issue , 2003, Pages 1780-1783

Modified pulsed PECVD technique for nano-crystalline silicon solar cells: An effect of i-layer growth temperature

(5) Das, U K a Centurioni, E b Morrison, S a Williamson, D L c Madan, A a

a MVSystems Inc (United States)

b CNR (Italy)

c Department of Metallurgical and Materials Engineering (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLITE SIZE; DUST FORMATION; GROWTH TEMPERATURE; PASSIVATION LAYERS;

BONDING; CARRIER CONCENTRATION; HYDROGEN; NANOSTRUCTURED MATERIALS; OXYGEN; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; THERMAL EFFECTS; THICKNESS MEASUREMENT;

SILICON SOLAR CELLS;

EID: 6344278561 PISSN: None EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (1)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.