Room-temperature epitaxial growth of CeO2(001) films on YSZ buffered Si(001) substrates

Applied Physics A: Materials Science and Processing

Volumn 67, Issue 4, 1998, Pages 455-457

  Trtik V ^a,b   Sanchez F ^a   Aguiar, R ^a   Maniette, Y ^a   Ferrater, C ^a   Varela, M ^a  

^a UNIVERSITY OF BARCELONA   (Spain)

^b INSTITUTE OF PHYSICS   (Czech Republic)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CERIUM COMPOUNDS; CRYSTAL STRUCTURE; DEPOSITION; PULSED LASER APPLICATIONS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SURFACE ROUGHNESS; SURFACE STRUCTURE; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; ZIRCONIA;

PULSED LASER DEPOSITION; SURFACE QUALITY; YTTRIA-STABILIZED ZIRCONIA;

EPITAXIAL GROWTH;

EID: 0032179620     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390050803     Document Type: Article

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