Surface condition of Si implanted GaAs revealed by the noncontact laser/microwave method

Journal of Electronic Materials

Volumn 25, Issue 7, 1996, Pages 1088-1092

  Ichimura, Masaya ^a   Yoshida, Hideaki ^a   Usami, Akira ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

GaAs; High low junction; Ion implantation; Microwave probe; Surface recombination

Indexed keywords

ANNEALING; CARRIER DENSITY; ION IMPLANTATION; LASER APPLICATIONS; NONDESTRUCTIVE EXAMINATION; SILICON; SURFACE PROPERTIES;

LASER MICROWAVE METHOD; MICROWAVE PROBES; SURFACE RECOMBINATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030181009     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02659908     Document Type: Article

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