Deposition and characterization of low-stress plasma enhanced chemical vapor deposition of tetraethoxysilane oxide for micro-electro-mechanical-systems applications

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 8 A, 2004, Pages 5491-5495

  Chang, Chin Piao ^a   Wang, Yeong Shing ^a   Huang, Ruey Shing ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Film stress; MEMS; PECVD; Tetraethoxysilane

Indexed keywords

ANNEALING; CANTILEVER BEAMS; CMOS INTEGRATED CIRCUITS; ELECTRODES; ETCHING; MICROMACHINING; MICROSTRUCTURE; OXIDES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; STRESSES;

FILM STRESS; PRECURSORS; STONEY EQUATION; TETRAETHOXYSILANE;

MICROELECTROMECHANICAL DEVICES;

EID: 6344231645     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.5491     Document Type: Article

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