Growth and structural characterization of GaAs/GaAsSb axial heterostructured nanowires

Journal of Crystal Growth

Volumn 311, Issue 7, 2009, Pages 1847-1850

  Dheeraj, D L ^a   Patriarche, G ^b   Zhou, H ^a   Harmand, J C ^b   Weman, H ^a   Fimland, B O ^a  

^a NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Norway)

^b CNRS   (France)

Author keywords

A1. Crystal structure; A3. Molecular beam epitaxy; B1. Antimonides; B1. Gallium compounds; B1. Nanomaterials

Indexed keywords

CRYSTAL GROWTH; CRYSTAL STRUCTURE; ELECTRIC WIRE; GALLIUM ALLOYS; GALLIUM COMPOUNDS; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NANOSTRUCTURED MATERIALS; NANOWIRES; SEMICONDUCTOR QUANTUM WIRES; STACKING FAULTS; SUBSTRATES; ZINC; ZINC SULFIDE;

A1. CRYSTAL STRUCTURE; A3. MOLECULAR BEAM EPITAXY; B1. ANTIMONIDES; B1. GALLIUM COMPOUNDS; B1. NANOMATERIALS;

SEMICONDUCTING GALLIUM;

EID: 63349109079     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.11.090     Document Type: Article

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