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Volumn 301-302, Issue SPEC. ISS., 2007, Pages 525-528

All-GaInNAs ultrafast lasers: Material development for emitters and absorbers

Author keywords

A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting quaternary alloys

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL GROWTH; MOLECULAR BEAM EPITAXY; NITRIDES; SURFACE EMITTING LASERS;

EID: 33947319471     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.261     Document Type: Article
Times cited : (2)

References (22)
  • 8
    • 0042968720 scopus 로고    scopus 로고
    • Keller U. Nature 424 (2003) 831
    • (2003) Nature , vol.424 , pp. 831
    • Keller, U.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.