Unintentional aluminum incorporation related to the introduction of nitrogen gas during the plasma-assisted molecular beam epitaxy

Journal of Crystal Growth

Volumn 311, Issue 7, 2009, Pages 1646-1649

  Ishikawa, F ^a   Wu, S D ^a   Kato, M ^a   Uchiyama, M ^a   Higashi, K ^a   Kondow, M ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

A3. Molecular beam epitaxy; B1. Nitrides; B2 Semiconducting III V materials; B3. Laser dioses; B3. Optical fiber devices

Indexed keywords

AERODYNAMICS; ALUMINA; CELL GROWTH; CRYSTAL GROWTH; EPITAXIAL LAYERS; FLOW OF GASES; FLOW RATE; GASES; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NITRIDES; OPTICAL FIBERS; OPTICAL MATERIALS; PLASMAS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WIRES;

A3. MOLECULAR BEAM EPITAXY; B1. NITRIDES; B2 SEMICONDUCTING III-V MATERIALS; B3. LASER DIOSES; B3. OPTICAL FIBER DEVICES;

ALUMINUM;

EID: 63349106359     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.11.042     Document Type: Article

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