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Volumn 47, Issue 7 PART 1, 2008, Pages 5572-5575
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GaN growth on Si(111) using simultaneous AlN/α-Si3N 4 buffer structure
a
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Author keywords
Si3N4; AIN; GaN; Rf MBE; Si(111) substrate
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Indexed keywords
ALUMINUM;
CHEMICAL VAPOR DEPOSITION;
CRYSTALLINE MATERIALS;
EPITAXIAL GROWTH;
GALLIUM ALLOYS;
GALLIUM NITRIDE;
LATTICE CONSTANTS;
LATTICE MISMATCH;
MOLECULAR BEAM EPITAXY;
SEMICONDUCTING GALLIUM;
SILICON;
TENSILE STRESS;
X RAY DIFFRACTION ANALYSIS;
AIN;
AL LAYERS;
BOUND EXCITONS;
BUFFER STRUCTURES;
C -AXIS;
CRITICAL FACTORS;
GAN;
GAN GROWTHS;
GAN LAYERS;
RF-MBE;
ROCKING CURVES;
SI(111);
SI(111) SUBSTRATE;
SI(111) SUBSTRATES;
SEMICONDUCTING SILICON COMPOUNDS;
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EID: 55149092002
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.47.5572 Document Type: Article |
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Times cited : (4)
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References (13)
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