-
1
-
-
0023421993
-
Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performance
-
Sep
-
F. Balestra, S. Cristoloveanu, M. Benachir, J. Brini, and T. Elewa, "Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performance," IEEE Electron Device Lett., vol. ED-8, no. 9, pp. 410-412, Sep. 1987.
-
(1987)
IEEE Electron Device Lett
, vol.ED-8
, Issue.9
, pp. 410-412
-
-
Balestra, F.1
Cristoloveanu, S.2
Benachir, M.3
Brini, J.4
Elewa, T.5
-
2
-
-
0035250378
-
Double-gate CMOS: Symmetrical- versus asymmetrical-gate devices
-
Feb
-
K. Kim and J. G. Fossum, "Double-gate CMOS: Symmetrical- versus asymmetrical-gate devices," IEEE Trans. Electron Devices, vol. 48, no. 2, pp. 294-299, Feb. 2001.
-
(2001)
IEEE Trans. Electron Devices
, vol.48
, Issue.2
, pp. 294-299
-
-
Kim, K.1
Fossum, J.G.2
-
3
-
-
13344270339
-
Modeling and optimization of fringe capacitance of nanoscale DGMOS devices
-
Feb
-
A. Bansal, B. Paul, and K. Roy, "Modeling and optimization of fringe capacitance of nanoscale DGMOS devices," IEEE Trans. Electron Devices, vol. 52, no. 2, pp. 256-262, Feb. 2005.
-
(2005)
IEEE Trans. Electron Devices
, vol.52
, Issue.2
, pp. 256-262
-
-
Bansal, A.1
Paul, B.2
Roy, K.3
-
4
-
-
64349083046
-
-
G. Fossum, M. M. Chowdhury, V. P. Trivedi, T. J. King, Y. K. Choi, J. An, and B. Yu, Physical insights on design and modeling of nanoscale FinFETs, in IEDM Tech. Dig., 2003, pp. 29.1.1-29.1.4.
-
G. Fossum, M. M. Chowdhury, V. P. Trivedi, T. J. King, Y. K. Choi, J. An, and B. Yu, "Physical insights on design and modeling of nanoscale FinFETs," in IEDM Tech. Dig., 2003, pp. 29.1.1-29.1.4.
-
-
-
-
5
-
-
13344249864
-
Source/drain-doping engineering for optimal nanoscale FinFET design
-
V. Trivedi and G. Fossum, "Source/drain-doping engineering for optimal nanoscale FinFET design," in Proc. IEEE SOI Conf., 2004, pp. 192-194.
-
(2004)
Proc. IEEE SOI Conf
, pp. 192-194
-
-
Trivedi, V.1
Fossum, G.2
-
6
-
-
1442311911
-
Device design and manufacturing issues for 10 nm-scale MOSFETS: A computational study
-
Jun
-
S. Hasan, J.Wang, and M. Lundstrom, "Device design and manufacturing issues for 10 nm-scale MOSFETS: A computational study," Solid State Electron., vol. 48, no. 6, pp. 867-875, Jun. 2004.
-
(2004)
Solid State Electron
, vol.48
, Issue.6
, pp. 867-875
-
-
Hasan, S.1
Wang, J.2
Lundstrom, M.3
-
7
-
-
0842342302
-
DC and AC characteristics of sub-50 nm MOSFETs with source/drain-to-gate nonoverlapped structure
-
Jan
-
H. Lee, J. Lee, and H. Shin, "DC and AC characteristics of sub-50 nm MOSFETs with source/drain-to-gate nonoverlapped structure," IEEE Trans. Nanotechnol., vol. 1, no. 1, pp. 219-225, Jan. 2002.
-
(2002)
IEEE Trans. Nanotechnol
, vol.1
, Issue.1
, pp. 219-225
-
-
Lee, H.1
Lee, J.2
Shin, H.3
-
8
-
-
84961836774
-
Effects of S/D nonoverlap and high-κ dielectrics on nano CMOS design
-
S. H. Chang, H. Lee, J. Lee, and H. Shin, "Effects of S/D nonoverlap and high-κ dielectrics on nano CMOS design," in Proc. Semicond. Des. Res. Symp., 2001, pp. 661-664.
-
(2001)
Proc. Semicond. Des. Res. Symp
, pp. 661-664
-
-
Chang, S.H.1
Lee, H.2
Lee, J.3
Shin, H.4
-
9
-
-
8144230593
-
Optimization of the nonoverlap length in decanano MOS deviceswith 2-D QM simulations
-
Nov
-
R. Gusmeroli, A. S. Spinelli, A. Pirovano, A. L. Lacatia, F. Boeuf, and T. Skotnicki, "Optimization of the nonoverlap length in decanano MOS deviceswith 2-D QM simulations," IEEE Trans. Electron Devices, vol. 51, no. 11, pp. 1849-1855, Nov. 2004.
-
(2004)
IEEE Trans. Electron Devices
, vol.51
, Issue.11
, pp. 1849-1855
-
-
Gusmeroli, R.1
Spinelli, A.S.2
Pirovano, A.3
Lacatia, A.L.4
Boeuf, F.5
Skotnicki, T.6
-
10
-
-
0020191751
-
SPICE modeling for small geometry MOSFET circuits
-
Oct
-
P. Yang and P. Chatterjje, "SPICE modeling for small geometry MOSFET circuits," IEEE Trans. Comput.-Aided Design Integr. Circuits Syst. vol. CAD-1, no. 4, pp. 169-182, Oct. 1982.
-
(1982)
IEEE Trans. Comput.-Aided Design Integr. Circuits Syst
, vol.CAD-1
, Issue.4
, pp. 169-182
-
-
Yang, P.1
Chatterjje, P.2
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