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Volumn 53, Issue 10, 2006, Pages 2655-2657

Compact modeling of gate sidewall capacitance of DG-MOSFET

Author keywords

Conformal mapping; Double gate MOSFET; Fringe capacitance; Gate underlap

Indexed keywords

ANALYTICAL MODELS; COMPACT MODELING; DESIGN AND OPTIMIZATIONS; DG-MOSFET; DOUBLE GATE MOSFET; DOUBLE-GATE DEVICES; FRINGE CAPACITANCE; GATE UNDERLAP; SEMI-EMPIRICAL TECHNIQUES;

EID: 63349096863     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.882029     Document Type: Article
Times cited : (16)

References (11)
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    • S. Hasan, J.Wang, and M. Lundstrom, "Device design and manufacturing issues for 10 nm-scale MOSFETS: A computational study," Solid State Electron., vol. 48, no. 6, pp. 867-875, Jun. 2004.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.