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Volumn , Issue , 2007, Pages 39-42
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A 10 μm thick poly-SiGe gyroscope processed above 0.35 μ CMOS
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Author keywords
CMOS; Gyroscope; Monolithic integration; SiGe; Silicon germanium
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Indexed keywords
COMPOSITE MICROMECHANICS;
MECHANICAL ENGINEERING;
MECHANICS;
MECHATRONICS;
MEMS;
MICROELECTROMECHANICAL DEVICES;
MONOLITHIC INTEGRATED CIRCUITS;
POLYSILICON;
CMOS;
GYROSCOPE;
INTERNATIONAL CONFERENCES;
MICRO-ELECTRO MECHANICAL SYSTEMS;
MONOLITHIC INTEGRATION;
MONOLITHICALLY INTEGRATED;
POLY-SIGE;
SIGE;
SILICON-GERMANIUM;
REACTIVE ION ETCHING;
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EID: 52149101191
PISSN: 10846999
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (24)
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References (5)
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