Effect of O2 pretreatment on fluorinated carbon film surfaces

Materials Transactions

Volumn 50, Issue 2, 2009, Pages 332-334

  Seong, Mi Ryn ^a   Lee, Gye Young ^a   Cho, Si Hyeong ^b   Lim, Hyun Woo ^b   Park, Jin Goo ^a   Lee, Caroline Sunyong ^a  

^a Hanyang University   (South Korea)

^b Micro Biochip Center (MBC)   (South Korea)

Author keywords

Atomic force microscope (AFM); Fluorinated carbon (FC) film; O2 pretreatment; X ray photoelectron spectroscope (XPS)

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARBON FILMS; DEPOSITION; MEMS; PHOTOELECTRONS; PHOTONS; STICTION; X RAY PHOTOELECTRON SPECTROSCOPY; X RAYS;

ANTI-STICTION LAYERS; DEPOSITION TEMPERATURES; FILM SURFACES; FLUORINATED CARBON FILMS; MICRO ELECTROMECHANICAL SYSTEM (MEMS); OPTIMUM CONDITIONS; PRE-TREATMENT; X-RAY PHOTOELECTRON SPECTROSCOPE;

SURFACE ROUGHNESS;

EID: 63149106931     PISSN: 13459678     EISSN: None     Source Type: Journal    
DOI: 10.2320/matertrans.MRA2008295     Document Type: Article

References (12)

1. T. R. Gengenbach and H. J. Griesser: Surf. Interface Anal. 26 (1998) 498-511.
2. T. M. Mayer, M. P. de Boer, N. D. Shinn and P. J. Clews: J. Vac. Sci. Technol. B 18 (2000) 2433-2440.
3. P. F. Man, B. P. Gogoi and C. H. Mastrangelo: IEEE J. Microelectromech. Syst. 6 (1997) 25-34.
4. M. Uhlig, A. Bertz, T. Werner and T. Gessner: Proc. 1st Int. IEEE Conf. on Polymers and Adhesives in Microelectronics and Photonics (2001) pp. 250-256.
5. Y. Matsumoto and M. Ishida: Sensor. Actuator. Phys. 83 (2000) 179-185.
6. J. P. Chang, H. W. Krautter, W. Zhu, R. L. Opila and C. S. Pai: J. Vac. Sci. Technol. A 17 (1999) 2969-2973.
7. Z. Ning, S. Cheng and L. Chen: Mater. Sci. Semicond. Process. 8 (2005) 467-471.
8. Z. Wu, Y. Yang and J. Wang: Diam. Relat. Mater. 17 (2008) 118-122.
9. N. Ariel, M. Eizenberg, Y. Wang and S. P. Murarka: Mater. Sci. Semicond. Process. 4 (2001) 383-391.
10. T. Hugel and M. Seitz: Macromol. Rapid. Commun. 22 (2001) 989-1016.
11. Website: http://www.psia.co.kr/
12. M.-R. Seong, G.-Y. Lee, S.-H. Cho, H.-W. Lim, J.-G. Park and C. S. Lee: Jpn. J. Appl. Phys. 46 (2008) 6422-6426.