Transport masses in strained silicon MOSFETs with different channel orientations

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 2008, Pages 631-634

  Rideau, D ^a   Feraille, M ^a   Michaillat, M ^a   Tavernier, C ^a   Jaouen, H ^a  

^a STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES; SILICON COMPOUNDS;

CHANNEL ORIENTATIONS; EFFECTIVE MASS APPROXIMATION; ENVELOP FUNCTION; NEW RESULTS; STRAINED SILICON MOSFETS; TIGHT BINDING MODEL; TRANSPORT MASS; TRANSPORT PARAMETERS;

STRAINED SILICON;

EID: 67650354743     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2008.4648248     Document Type: Conference Paper

References (16)

1. K. Uchida et al., Proc. IEDM, 129 (2005).
2. D. Esseni and P. Palestri, Phys. Rev. B, vol 72, 165342 (2005).
3. J.P. Van der Steen, IEEE. Trans. Elec. Device, vol 54, 1843 (2007).
4. D. Rideau et al., Proc. IEEE. SISPAD (2007).
5. Y. M. Niquet, et al. Phys. Rev. B 62, 5109 (2000).
6. D. Rideau et al., submitted to IEEE. Solid State elect. (2008).
7. J.M. Luttinger and W. Kohn, Phys. Rev. 97, 869 (1955).
8. z = 0.1905.
9. D. Rideau et al., Phys. Rev. B, vol 74, 195208 (2006).
10. J.-M. Jancu et al., Phys. Rev. B 57, 6493 (1998).
11. Y. M. Niquet and D. Rideau, submitted to Phys. Rev. B (2008).
12. t = 0.1959 [11].
13. S. Lee et al., Proc. 14th Workshop on Modelling and Simulation of Electron Devices, (2003).
14. M. Friesen et al., Phys. Rev. B 75, 115318 (2007), and references therein.
15. sp-passivation of the surfaces. We found for electron only slight differences in terms of energy level and band curvatures at valleys minima.
16. D. Rideau et al., Proc. ULIS (2008).