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Volumn , Issue , 2008, Pages 1771-1774
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A fully-differential subthreshold SRAM Cell with auto-compensation
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Author keywords
[No Author keywords available]
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Indexed keywords
6T-SRAM;
90NM CMOS;
BIT LINES;
CELL STRUCTURES;
COMPENSATION MECHANISMS;
FULLY DIFFERENTIALS;
NOISE-INTERFERENCES;
SIMULATION RESULTS;
SRAM CELLS;
SRAM DESIGNS;
STATIC-NOISE MARGINS;
STORAGE NODES;
SUB THRESHOLDS;
SUPPLY VOLTAGES;
WRITE MARGINS;
CMOS INTEGRATED CIRCUITS;
LOGIC DESIGN;
STATIC RANDOM ACCESS STORAGE;
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EID: 62949209323
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/APCCAS.2008.4746384 Document Type: Conference Paper |
Times cited : (11)
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References (8)
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