A 256kb sub-threshold SRAM in 65nm CMOS

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn , Issue , 2006, Pages

  Calhoun, Benton H ^a   Chandrakasan, Anantha ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

STATIC-NOISE MARGIN; SUB-THRESHOLD FUNCTIONALITY;

LEAKAGE CURRENTS; STATIC RANDOM ACCESS STORAGE;

CMOS INTEGRATED CIRCUITS;

EID: 33845197614     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)