Effect of ambient pressure on resistance and resistance fluctuations in single-wall carbon nanotube devices

Journal of Applied Physics

Volumn 100, Issue 2, 2006, Pages

  Vijayaraghavan, A ^a   Kar, S ^a   Rumyantsev, S ^a,b   Khanna, A ^a   Soldano, C ^c   Pala, N ^a   Vajtai, R ^a   Kanzaki, K ^d   Kobayashi, Y ^d   Nalamasu, O ^a   Shur, M S ^a   Ajayan, P M ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b IOFFE INSTITUTE   (Russian Federation)

^c Research Rensselaer Polytechnic Institute   (United States)

^d Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHAMBER; NOISE MEASUREMENTS; RESISTANCE FLUCTUATIONS; SQUARED CURRENT;

ACOUSTIC NOISE; ATMOSPHERIC PRESSURE; GOLD; METALLIC COMPOUNDS; SEMICONDUCTOR MATERIALS; TITANIUM;

CARBON NANOTUBES;

EID: 33746824137     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2218265     Document Type: Article

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