Polysilazane precursor used for formation of oxidized insulator

Materials Research Society Symposium Proceedings

Volumn 1066, Issue , 2008, Pages 107-111

  Urabe, Yuji ^a   Sameshima, Toshiyuki ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CHEMICALS REMOVAL (WATER TREATMENT); DIELECTRIC MATERIALS; HEAT TREATMENT; HIGH PRESSURE ENGINEERING; LOW-K DIELECTRIC; METALS; MOS DEVICES; OXIDATION; OXIDE SEMICONDUCTORS; OXYGEN; SILICA; SILICON OXIDES; THIN FILMS;

HIGH PRESSURE; INTERFACE TRAPS; METAL-OXIDE- SEMICONDUCTORCAPACITORS; OXIDE CHARGE DENSITY; OXYGEN PLASMAS; PRECURSOR FILMS; SILICON SUBSTRATES; SIO2-SI INTERFACE;

NITROGEN COMPOUNDS;

EID: 62949130835     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-1066-a05-02     Document Type: Conference Paper

References (9)

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