Heat treatment of amorphous and polycrystalline silicon thin films with high-pressure H2O vapor

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 8, 1998, Pages 4254-4257

  Sameshima, Toshiyuki ^a   Satoh, Mitsuru ^a   Sakamoto, Keiji ^a   Ozaki, Kentaro ^a   Saitoh, Keiko ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

Hydrogen concentration; Laser crystallization; LPCVD a Si; Optical absorption; Photoconductivity

Indexed keywords

AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; HEAT TREATMENT; PHOTOCONDUCTIVITY; POLYCRYSTALLINE MATERIALS; SILICON; THIN FILMS;

POLYCRYSTALLINE SILICON THIN FILMS;

SEMICONDUCTING FILMS;

EID: 0032131629     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.4254     Document Type: Article

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