Ion implantation doping for AlGaN/GaN HEMTs

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue , 2006, Pages 2364-2367

  Suita, Muneyoshi ^a   Nanjo, Takuma ^a   Oishi, Toshiyuki ^a   Abe, Yuji ^a   Tokuda, Yasunori ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURE; ELECTRICAL ACTIVATION; SELECTIVE DOPING; SOURCE/DRAIN CONTACTS; 73.40.KP; 81.05.EA; 85.30.DE; 85.30.TV; 85.40.RY;

ANNEALING; DOPING (ADDITIVES); GALLIUM NITRIDE; ION IMPLANTATION; OPTIMIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; TRANSCONDUCTANCE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33746335651     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200565135     Document Type: Conference Paper

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