Nonpolar 4H-AlN grown on 4H-SiC (1 1- 00) with reduced stacking fault density realized by persistent layer-by-layer growth

Applied Physics Letters

Volumn 93, Issue 8, 2008, Pages

  Horita, Masahiro ^a   Kimoto, Tsunenobu ^a   Suda, Jun ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; LANDFORMS; MICROSCOPIC EXAMINATION; SILICON CARBIDE; SOIL CONSERVATION; TWO DIMENSIONAL;

LAYER-BY-LAYER GROWTH; NON-POLAR; STACKING FAULT DENSITY;

SUBSTRATES;

EID: 51349131344     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2976559     Document Type: Article

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