Epitaxial growth of 6H-AlN on M-plane SiC by plasma-assisted molecular beam epitaxy

Journal of Crystal Growth

Volumn 300, Issue 1, 2007, Pages 127-129

  Schaadt, D M ^a   Brandt, O ^a   Trampert, A ^a   Schonherr H P ^a   Ploog, K H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

A1. Crystal structure; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting aluminum compounds

Indexed keywords

ALUMINUM COMPOUNDS; ATOMIC FORCE MICROSCOPY; MOLECULAR BEAM EPITAXY; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

CRYSTAL QUALITY; ELECTRON DIFFRACTION PATTERNS; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY;

EPITAXIAL GROWTH;

EID: 33847270074     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.004     Document Type: Article

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