2-bit Poly-Si-TFT nonvolatile memory using hafnium oxide, hafnium silicate and zirconium silicate

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 2005, Issue , 2005, Pages 927-930

  Lin, Yu Hsien ^a   Chien, Chao Hsin ^a,b   Chou, Tung Hung ^a   Chao, Tien Sheng ^a   Chang, Chun Yen ^a   Lei, Tan Fu ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

GATE DIELECTRICS; HAFNIUM COMPOUNDS; PERMITTIVITY; POLYSILICON; THIN FILM TRANSISTORS;

HAFNIUM SILICATE; READ/WRITE DISTURBANCES; TRAPPING LAYERS; ZIRCONIUM SILICATE;

NONVOLATILE STORAGE;

EID: 33847724297     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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