Low-temperature activation of Mg-doped GaN with Pd thin films

Physica Status Solidi (B) Basic Research

Volumn 228, Issue 2, 2001, Pages 391-393

  Waki, I ^a   Fujioka, H ^a   Oshima, M ^a   Miki, H ^b   Okuyama, M ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b High Performance Materials Department   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035539906     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3951(200111)228:2<391::AID-PSSB391>3.0.CO;2-I     Document Type: Article

References (5)

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3. S. NAKAMURA, T. MUKAI, M. SENOH, and N. IWASA, Jpn. J. Appl. Phys. 31, L139 (1992).
4. I. WAKI, H. FUJIOKA, M. OSHIMA, H. MIKI, and A. FUKIZAWA, Appl. Phys. Lett. 78, 2899 (2001).
5. I. WAKI, H. FUJIOKA, M. OSHIMA, H. MIKI, and M. OKUYAMA, J. Appl. Phys., accepted.