SCOPUS 정보 검색 플랫폼

Volumn 37, Issue 7, 1998, Pages 3878-3881

Characteristics of Mg-doped GaN and AlGaN grown by H2-ambient and N2-ambient metalorganic chemical vapor deposition

Author keywords

Acceptor concentration; Carrier concentration; Group III nitrides; N2 ambient metalorganic chemical vapor deposition; p type doping; Uniformity

Indexed keywords

MANGANESE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING;

ACCEPTOR CONCENTRATION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032115305 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.37.3878 Document Type: Article

Times cited : (17)

References (11)

1
- 84883188181
- H. Amano, M. Kito, K. Hiramatsu and I. Akasaki: Jpn. J. Appl. Phys. 28 (1989) L2112.
- (1989) Jpn. J. Appl. Phys. , vol.28
- Amano, H.¹ Kito, M.² Hiramatsu, K.³ Akasaki, I.⁴

2
- 0026819254
- S. Nakamura, T. Mukai, M. Senoh and N. Iwasa: Jpn. J. Appl. Phys. 31 (1992) L139.
- (1992) Jpn. J. Appl. Phys. , vol.31
- Nakamura, S.¹ Mukai, T.² Senoh, M.³ Iwasa, N.⁴

3
- 0000425145
- H. Amano, M. Kito, K. Hiramatsu and I. Akasaki: Inst. Phys. Conf. Ser. 106 (1989) 725.
- (1989) Inst. Phys. Conf. Ser. , vol.106 , pp. 725
- Amano, H.¹ Kito, M.² Hiramatsu, K.³ Akasaki, I.⁴

4
- 0026406592
- S. Nakamura, T. Mukai and M. Senoh: Jpn. J. Appl. Phys. 30 (1991) 1998.
- (1991) Jpn. J. Appl. Phys. , vol.30 , pp. 1998
- Nakamura, S.¹ Mukai, T.² Senoh, M.³

5
- 0029779805
- S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku and Y. Sugimoto: Jpn. J. Appl. Phys. 35 (1996) L74.
- (1996) Jpn. J. Appl. Phys. , vol.35
- Nakamura, S.¹ Senoh, M.² Nagahama, S.³ Iwasa, N.⁴ Yamada, T.⁵ Matsushita, T.⁶ Kiyoku, H.⁷ Sugimoto, Y.⁸

6
- 0030572215
- I. Akasaki, S. Sota, H. Sakai, T. Tanaka, M. Koike and H. Amano: Electron. Lett. 32 (1996) 1105.
- (1996) Electron. Lett. , vol.32 , pp. 1105
- Akasaki, I.¹ Sota, S.² Sakai, H.³ Tanaka, T.⁴ Koike, M.⁵ Amano, H.⁶

7
- 0030264202
- K. Itaya, M. Onomura, J. Nishio, L. Sugiura, S. Saito, M. Suzuki, J. Rennie, S. Nunoue, M. Yamamoto, H. Fujimoto, Y. Kokubun, Y. Ohba, G. Hatakoshi and M. Ishikasa: Jpn. J. Appl. Phys. 35 (1996) L1315.
- (1996) Jpn. J. Appl. Phys. , vol.35
- Itaya, K.¹ Onomura, M.² Nishio, J.³ Sugiura, L.⁴ Saito, S.⁵ Suzuki, M.⁶ Rennie, J.⁷ Nunoue, S.⁸ Yamamoto, M.⁹ Fujimoto, H.¹⁰ Kokubun, Y.¹¹ Ohba, Y.¹² Hatakoshi, G.¹³ Ishikasa, M.¹⁴

8
- 0026867861
- S. Nakamura, N. Iwasa, M. Senoh and T. Mukai: Jpn. J. Appl. Phys. 31 (1992) 1258.
- (1992) Jpn. J. Appl. Phys. , vol.31 , pp. 1258
- Nakamura, S.¹ Iwasa, N.² Senoh, M.³ Mukai, T.⁴

9
- 21544461570
- W. Gotz, N. M. Johnson, J. Walker, D. P. Bour, H. Amano and I. Akasaki: Appl. Phys. Lett. 67 (1995) 2666.
- (1995) Appl. Phys. Lett. , vol.67 , pp. 2666
- Gotz, W.¹ Johnson, N.M.² Walker, J.³ Bour, D.P.⁴ Amano, H.⁵ Akasaki, I.⁶

10
- 0001017512
- L. Sugiurra, M. Suzuki and J. Nishio: Appl. Phys. Lett. 72 (1998) 1748.
- (1998) Appl. Phys. Lett. , vol.72 , pp. 1748
- Sugiurra, L.¹ Suzuki, M.² Nishio, J.³

11
- 3743102060
- submitted
- M. Suzuki, M. Onomura, S. Nunoue, L. Sugiura, J. Nishio and C. Hongo: submitted to J. Cryst. Growth.
- J. Cryst. Growth
- Suzuki, M.¹ Onomura, M.² Nunoue, S.³ Sugiura, L.⁴ Nishio, J.⁵ Hongo, C.⁶

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.