Lateral size and thickness dependence in ferroelectric nanostructures formed by localized domain switching

Acta Materialia

Volumn 57, Issue 7, 2009, Pages 2047-2054

  Ng, Nathaniel ^a,b   Ahluwalia, Rajeev ^a   Su, H B ^b   Boey, F ^b  

^a INSTITUTE OF HIGH PERFORMANCE COMPUTING   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Ferroelectric switching; Lateral size effects; Nanostructures; Phase field simulation; Piezo force microscopy

Indexed keywords

ELECTRIC FIELDS; FERROELECTRICITY; NANOSTRUCTURES; SIZE DETERMINATION;

CLAMPING EFFECTS; COERCIVE VOLTAGES; DOMAIN SWITCHING; FERROELECTRIC NANOSTRUCTURES; FERROELECTRIC SWITCHING; FERROELECTRIC TRANSITIONS; FRINGING ELECTRIC FIELDS; LATERAL SIZE EFFECTS; LOCAL SWITCHING; MINIMUM FEATURE SIZES; PARALLEL-PLATE CAPACITORS; PHASE FIELD SIMULATION; PIEZO-FORCE MICROSCOPY; SWITCHING BEHAVIORS; THICKNESS DEPENDENCES; TIME-DEPENDENT GINZBURG-LANDAU EQUATIONS; TWO-DIMENSIONAL;

SWITCHING;

EID: 62149098467     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.actamat.2008.10.022     Document Type: Article

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