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Volumn 79, Issue 8, 2009, Pages

Hydrogen adsorption and etching on the Si-rich 3 C -SiC(001) 3×2 surface: First-principles molecular dynamics calculations

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EID: 62149097562     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.79.085314     Document Type: Article
Times cited : (13)

References (36)
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    • edited by W. J. Choyke H. Matsunami, and G. Pensl Springer, Berlin
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    • The model itself had been also reoptimized with GGA, following the same procedure as described above for the LDA calculations, but with 25 of vacuum above the slab.
    • The model itself had been also reoptimized with GGA, following the same procedure as described above for the LDA calculations, but with 25 of vacuum above the slab.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.