A 0.35 μm SiGe BiCMOS technology for power amplifier applications

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2007, Pages 198-201

  Joseph, Alvin ^a   Liu, Qizhi ^a   Hodge, Wade ^b   Gray, Peter ^c   Stein, Kenneth ^a   Previti Kelly, Rose ^a   Lindgren, Peter ^a   Gebreselasie, Ephrem ^a   Voegeli, Ben ^a   Candra, Panglijen ^a   Hershberger, Doug ^a   Malladi, Ramana ^a   Wang, Ping Chuan ^c   Watson, Kim ^a   He, Zhong Xiang ^a   Dunn, Jim ^a  

^a IBM RESEARCH   (United States)

^b Green Mountain Coffee   (United States)

^c IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INDUCTANCE METAL GROUND;

INDUCTANCE; POWER AMPLIFIERS; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES;

BICMOS TECHNOLOGY;

EID: 39049140673     PISSN: 10889299     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/BIPOL.2007.4351868     Document Type: Conference Paper

References (12)

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3. W. Bisshof et al., IEEE Radio Frequency Integrated Circuits Symposium, pp. 35-38, May 2001
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5. A. Joseph et al., IEEE Transactions on Electron Devices, Vol. 46, Issue 7, pp. 1347-1354, July 1999
6. R. Malladi et al., to be published in the proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting, Oct. 2007
7. M. Racanelli et al., IEEE Transactions on Electron Devices, Vol. 52, Issue 7, pp. 1235-1258, July 2005
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11. http://www.gcsincorp.com/
12. http://www.st.northropgrumman.com/velocium/foundry.html