Performance and modeling of Si and SiGe for power amplifiers (invited)

2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07

Volumn , Issue , 2007, Pages 13-17

  Zampardi, Pete ^a  

^a SKYWORKS SOLUTIONS INC   (United States)

Author keywords

HBT; Modeling; Power amplifiers; Si; SiGe

Indexed keywords

DESIGN KITS; HANDSET POWER AMPLIFIERS; SILICON-BASED PA; TECHNOLOGY DEVELOPMENTS;

GERMANIUM; MARKETING; MATHEMATICAL MODELS; SILICON;

POWER AMPLIFIERS;

EID: 34547276753     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SMIC.2007.322758     Document Type: Conference Paper

References (29)

1. M. Golio, "Active Devices for Commercial Subscriber Power Amplifier Products," International Union of Radio Science, Lille, France, 1996
2. M Sun, P J Zampardi, R Ramanathan, B Daly, T Richter, S Machuga, "All in One Module," IEICE Conference, March 2006, pp. SS-17-SS-18
3. G. Zhang, S. Chang, A. Wang, "WCDMA. PCS Handset Front End Module,"Microwave Symposium Digest, 2006 IEEE MTT-S International, Technical Digest, pp. 304-307
4. A. van Bezooijen, C. Chanlo, and A. H-M. van Roermund, "Adaptively Preserving Power Amplifier Linearity under Antenna Mismatch," Microwave Symposium Digest, 2004 IEEE MTT-S International, Volume 3, 6-11 June 2004 pp. 1515-1518 Vol. 3
5. H. Patterson, "Enhanced Efficiency CDMA Power Amplifiers using Gain Stage Switching", Technical Digest of the 2000 IEEE Topical Workshop on Power Amplifiers for Wireless Applications, paper 2.7
6. J. Deng, P. Gudem, L.E. Larson, P. M. Asbeek, "A High Average-Efficiency SiGe HBT Power Amplifier for WCDMA Handset Applications," IEEE Transactions on Microwave Theory and Techniques, Vol. 53, No. 2, Feb. 2005, pp. 529-537
7. D. Guckenberger, K. Korhegay, "Integrated DC-DC converter design for improved WCDMA power amplifier efficiency in. SiGe BiCMOS technology," Low Power Electronics and Design, 2003. ISLPED ''03. Proceedings of the 2003 International Symposium on 25-27 Aug. 2003 pp. 449-454
8. O. Kuijken, K. Sulaksono, R. Heeres, L. van den Oever, L. de Maaijer, "Optimization of PA Linearity and Efficiency through Loadpull Measurements and Simulations using Modulated Signals", Proceedings of the 2006 IEEE Topical Workshop on Power Amplifiers for Wireless Applications, San Diego, 2006
9. V. Ramachandran, A. J. Joseph, J. B. Johnson, M. D. Gallagher, P.-O. Brandt, L. Tilly, D. R. Greenberg, W. E. Ansley, U. Gogineni, D. L. Harame, J. S. Dunn, "A Fully-Manufacturable 0.5μm SiGe BiCMOS Technology for Wireless Power Amplifier Applications," Digest of the 32nd European Microwave Conference," pp, 303-306
10. K. Nellis and P. Zampardi, "A Comparison of Bipolar Technologies for Linear Handset Power Amplifier Applications," IEEE Journal of Solid-State Circuits, vol. 39, no. 10, Oct. 2004, pp. 1746-1754
11. F. Huang and K. K. O., "Single-Pole Double-Throw CMOS Switches for 900-MHz and 2.4 GHz Applications on p Silicon Substrates," IEEE Journal of Solid-State Circuits, Vol. 39, No. 1, January 2004, pp. 35-41
12. F. van Straten, B. Smolders, A. van Zuijlen, and R. Ooijman, "Multiband Cellular RF Solutions," IEEE Journal of Solid-State Circuits, Vol. 39, No. 10, Oct. 2004, pp. 1598-1604
13. BGY284 Leaflet, www.nxp.com/acrobat_download/literature/9397/75010438 .pdf
14. C.E. Weitzel, "RF Power Amplifiers for Cellphones," CS Mantech, Paper 2-2, 2003
15. K. T. Ng, N. P. Pham, B. Rejaei, P. M. Sarro, and J. N. Burghartz, "A Sub-surface Metallization Post-Process IC Module for RF Technology," Proceedings of the 2000 Bipolar/BiCMOS Circuits and Technology Meeting, 2000. 24-26 Sept. 2000 pp. 195 - 198
16. Kavita Goverdhanam, Wenhua Dai, Michel Frei, Don Farrell, Jeff Bude, Hugo Safar, M. Mastrapasqua, Tim Bambridge, "Distributed Effects in High Power RF LDMOS Transistors," Microwave Symposium Digest, 2005 IEEE International MTT-S, pp. 827-830.
17. M. Wetzel, P.R. de la Houssaye, P.M. Asbeck, I. Lagnado, "Layout Parasitic Effects on Microwave Characteristics of Large Periphery Transistors," 2000 IEEE Topical Workshop on Power Amplifiers for Wireless Communications, paper 4.2
18. F. van Rijs, R. Dekker, H.A. Visser, H.G.A. Huizing, D. Hartskeerl, P.H.C. Magnee, R. Dondero, "Influence of output impedance on power added efficiency of Si-bipolar power transistors," Microwave Symposium Digest, Vol. 3, June 11-16, 2000, pp. 1945 -1948
19. R. Hajji, F.M. Ghannouchi, A.B. Kouki, "A systematic layout-based method for the modeling of high-power HBT's using the scaling approach," IEEE Transactions on Electron Devices, Vol. 42, No 3, March 1995, pp. 528 - 533
20. R.A.Pucel, "Design Considerations for Monolithic Microwave Circuits," IEEE Transactions on Microwave Theory and Techniques, Volume 29, Issue 6, Jun 1981 pp. 513-534
21. P. Dai, P. Zampardi, K. Kwok, C. Cismara and R. Ramanathan, "Study of GaAs HBT Thermal Coupling Effect by Using Simple Current Mirror Circuits," 2005 CS MANTECH Paper 14.9
22. K. Lu, P.M. Mcintosh, C.M. Snowden, and R. D. Pollard, "Low-Frequency Dispersion and Its Influence on the Intermodulation Performance of AlGaAs/GaAs/HBTs," Digest of 2006 International Microwave Symposium, 2006, pp. 1373-1376.
23. Z. Alon, Extraction and Application of Behavioral Models in Power Amplifier Simulation, Master's Thesis, University of California at Santa Barbara, 2003.
24. N. Nenadovic, Electrothermal Behavior of High-Frequency Silicon-on-Glass Transistors, Ph.D. Dissertation, TU Delft, November 1, 2004.
25. F. M. De Paola, J. P. Nowakowski, V. d'Alessandro, and N. Rinaldi, "Fully Automated Electrothermal Simulation Using Standard CAD Tools," 25th International Conference on MIcroELectronics (MIEL), Niš, Serbia & Montenegro, May 2006
26. F. M. De Paola, V. d'Alessandro, G. Breglio, N. Rinaldi, and P. Spirito, "Enhancing Commercial CAD Tools toward the Electrothermal Simulation of Power Transistors," Proceedings of the 18th International Symposium on Power Semiconductor Devices & ICs, June 4-8, 2006 Naples, Italy
27. K. Poulton, K.L. Knudsen, J.J. Corcoran, K.-C. Wang, R.L. Nubling, M.-C.F. Chang, "Thermal design and simulation of bipolar integrated circuits," IEEE Journal of Solid-State Circuits, Volume 27, Issue 10, Oct. 1992, pp. 1379 - 1387
28. D.J. Walkey, T.J. Smy, R.G. Dickson, J.S. Brodsky, D.T. Zweidinger, R.M. Fox, "Equivalent circuit modeling of static substrate thermal coupling using VCVS representation," IEEE Journal of Solid-State Circuits, Volume 37, Issue 9, Sep 2002 pp. 1198 - 1206
29. E. Mouthaan, R. Tinti, H.C. De Graaff, J.L. Tauritz, J. Slotboom, "Modelling and measurement of electro-thermal interaction in RF bipolar power transistors," Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 1998. Digest of Papers. 1998, 17-18 Sept. 1998 pp. 47 - 56