Solid state devices based on thin films of Cu2O show a new type of I-V relations

Solid State Ionics

Volumn 175, Issue 1-4, 2004, Pages 375-378

  Rosenstock, Zvi ^a,b   Feldman, Irena ^a   Riess, Ilan ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^b RAFAEL   (Israel)

Author keywords

Cuprous oxide; I v relations; MIEC; Mixed ionic electronic conductor; Rectification

Indexed keywords

CONCENTRATION (PROCESS); CURRENT VOLTAGE CHARACTERISTICS; ELECTRODES; IONIC CONDUCTION; LIGHT POLARIZATION; OXIDATION; QUENCHING; SCHOTTKY BARRIER DIODES; THIN FILMS;

CUPROUS OXIDE; IONIC CONDUCTIVITY; MIXED-IONIC-ELECTRONIC-CONDUCTOR; RECTIFICATION;

COPPER COMPOUNDS;

EID: 10044279438     PISSN: 01672738     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssi.2004.03.049     Document Type: Conference Paper

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