Room temperature instability of E′γ, centers induced by γ irradiation in amorphous SiO2

Journal of Physical Chemistry A

Volumn 113, Issue 6, 2009, Pages 1026-1032

  Messina, F ^a   Agnello, S ^a   Cannas, M ^a   Parlato, A ^a  

^a UNIVERSITY OF PALERMO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; ANNEALING; DEFECTS; GROWTH KINETICS; PULSED LASER APPLICATIONS; RADIATION; SILICA; WATER ANALYSIS;

AMORPHOUS SILICAS; ANNEALING KINETICS; CONCENTRATION OF; DECAY KINETICS; END OF IRRADIATIONS; ENERGY DENSITIES; INDUCED DEFECTS; IR ABSORPTIONS; LASER LIGHTS; OH GROUPS; OPTICAL ABSORPTION MEASUREMENTS; PARTIAL RECOVERIES; PULSED ULTRAVIOLETS; QUANTITATIVE ANALYSIS; REACTION PARAMETERS; ROOM TEMPERATURE ANNEALING; ROOM TEMPERATURES; SPECTRAL REGIONS;

IRRADIATION;

EID: 61649096209     PISSN: 10895639     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp8054813     Document Type: Article

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