Origin of the low-energy emission band in epitaxially grown para-sexiphenyl nanocrystallites

Journal of Chemical Physics

Volumn 130, Issue 8, 2009, Pages

  Kadashchuk, A ^a,b   Schols, S ^a,c   Heremans, P ^a   Skryshevski, Yu ^b   Piryatinski, Yu ^b   Beinik, I ^d   Teichert, C ^d   Hernandez Sosa, G ^e   Sitter, H ^e   Andreev, A ^f   Frank, P ^g   Winkler, A ^g  

^a IMEC   (Belgium)

^b INSTITUTE OF HYDROBIOLOGY   (Ukraine)

^c Katholieke Universiteit Leuven   (Belgium)

^d UNIVERSITY OF LEOBEN   (Austria)

^e JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^f NANOIDENT Technologies AG   (Austria)

^g GRAZ UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLITES; DEFECTS; EMISSION SPECTROSCOPY; EPITAXIAL GROWTH; FILM GROWTH; LUMINOUS PAINT; MICA; MOLECULAR BEAMS; MOLECULAR DYNAMICS; SILICATE MINERALS;

ATOMIC FORCES; CHEMICAL STRUCTURES; COMPARATIVE STUDIES; DEFECT EMISSIONS; EMISSION PROPERTIES; EPITAXIALLY GROWN; FILM MORPHOLOGIES; GROWTH CONDITIONS; GROWTH MOUNDS; HOT-WALL EPITAXIES; KCL(001); LOW-ENERGY EMISSIONS; ORGANIC MOLECULAR BEAM EPITAXIES; PARA-SEXIPHENYL; RED-SHIFTED EMISSIONS; RELATIVE INTENSITIES; STRUCTURAL QUALITIES; STRUCTURE-RELATED; TEMPLATE SUBSTRATES; TIME-RESOLVED PHOTOLUMINESCENCES;

SUBSTRATES;

EID: 61449256158     PISSN: 00219606     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3073883     Document Type: Article

References (48)

1. C. W. Tang and S. A. Van Slyke, Appl. Phys. Lett. 0003-6951 10.1063/1.98799 51, 913 (1987); J. H. Burroughs, D. D. C. Bradley, A. R. Brown, R. N. Marks, K. Mackay, R. H. Friend, P. L. Burns, and A. B. Holmes, Nature (London) 347, 539 (1990).
2. C. D. Dimitrakopoulos, S. Purushothaman, J. Kymissis, A. Callegari, and J. M. Shaw, Science 283, 822 (1999).
3. C. J. Brabec, N. S. Sariciftci, and J. C. Hummelen, Adv. Funct. Mater. 11, 15 (2001).
4. V. G. Kozlov, V. Bulovic, P. E. Burrows, and S. R. Forrest, Nature (London) 0028-0836 10.1038/38693 389, 362 (1997); H. Nakanotani, S. Akiyama, D. Ohnishi, M. Moriwake, M. Yahiro, T. Yoshihara, S. Tobita, and C. Adachi, Adv. Funct. Mater. 17, 2328 (2007).
5. S. Tasch, C. Brandstätter, F. Meghdadi, G. Leising, G. Froyer, and L. Athouel, Adv. Mater. (Weinheim, Ger.) 9, 33 (1997).
6. J. Stampfl, S. Tasch, G. Leising, and U. Scherf, Synth. Met. 71, 2125 (1995).
7. G. Leising, S. Tasch, and W. Graupner, Handbook of Conducting Polymers, 2nd ed. (Dekker, New York, 1997).
8. A. Andreev, F. Ouochi, F. Cordella, A. Mura, G. Bongiovanni, H. Sitter, G. Hlawacek, C. Teichert, and N. S. Sariciftci, J. Appl. Phys. 99, 034305 (2006).
9. G. Hlawacek, C. Teichert, A. Andreev, H. Sitter, S. Berkebile, G. Koller, M. Ramsey, and R. Resel, Phys. Status Solidi A 202, 2376 (2005).
10. C. Teichert, G. Hlawacek, A. Yu. Andreev, H. Sitter, P. Frank, A. Winkler, and N. S. Sariciftci, Appl. Phys. A: Mater. Sci. Process. 82, 665 (2005).
11. F. Balzer and H.-G. Rubahn, Adv. Funct. Mater. 1616-301X 10.1002/adfm.200400367 15, 17 (2005); H. Yanagi and S. Okamoto, Appl. Phys. Lett. 71, 2563 (1997).
12. H. Yanagi, T. Ohara, and T. Morikawa, Adv. Mater. (Weinheim, Ger.) 13, 1452 (2001).
13. A. Andreev, G. Matt, C. J. Brabec, H. Sitter, D. Badt, H. Seyringer, and N. S. Sariciftci, Adv. Mater. (Weinheim, Ger.) 12, 629 (2000); H. Plank, R. Resel, S. Purger, J. Keckes, A. Thierry, B. Lotz, A. Andreev, N. S. Sariciftci, and H. Sitter, Phys. Rev. B 64, 235423 (2001).
14. R. Resel, J. Phys.: Condens. Matter 20, 184009 (2008).
15. A. Koma, K. Sunouchi, and T. Miyajima, J. Vac. Sci. Technol. B 3, 724 (1985).
16. A. Koma, K. Ueno, and K. Saiki, J. Cryst. Growth 111, 1029 (1991).
17. S. R. Forrest, Chem. Rev. (Washington, D.C.) 97, 1793 (1997).
18. K. Erlacher, R. Resel, S. Hampel, T. Kuhlmann, K. Lischka, B. Muller, A. Thierry, B. Lotz, and G. Leising, Surf. Sci. 437, 191 (1999).
19. H. Yanagi, T. Morikawa, S. Hotta, and K. Yase, Adv. Mater. (Weinheim, Ger.) 13, 313 (2001).
20. D. E. Hooks, T. Fritz, and M. D. Ward, Adv. Mater. (Weinheim, Ger.) 13, 227 (2001).
21. M. Pope and C. E. Swenberg, Electronic Processes in Organic Crystals and Polymers, 2nd ed. (Oxford University Press, New York, 1999).
22. A. Kadashchuk, A. Andreev, H. Sitter, N. S. Sariciftci, Y. Skryshevski, Y. Piryatinski, I. Blonsky, and D. Meissner, Adv. Funct. Mater. 14, 970 (2004).
23. M. Grell, D. D. C. Bradley, G. Ungar, J. Hill, and K. S. Whitehead, Macromolecules 32, 5810 (1999).
24. V. Cimrova, U. Scherf, and D. Neher, Appl. Phys. Lett. 69, 608 (1996).
25. V. N. Bliznyuk, S. A. Carter, J. C. Scott, G. Klarner, and R. D. Miller, Macromolecules 32, 361 (1999).
26. U. Scherf and E. List, Adv. Mater. (Weinheim, Ger.) 14, 477 (2002) (and references therein).
27. E. J. W. List, R. Guenter, P. S. de Freitas, and U. Scherf, Adv. Mater. (Weinheim, Ger.) 14, 374 (2002).
28. S. Gamerith, C. Gadermaier, U. Scherf, and E. J. W. List, Phys. Status Solidi A 201, 1132 (2004).
29. X. Gong, P. K. Iyer, D. Moses, G. C. Bazan, A. J. Heeger, and S. Xiao, Adv. Funct. Mater. 13, 325 (2003).
30. M. Sims, D. D. C. Bradley, M. Ariu, M. Koeberg, A. Asimakis, M. Grell, and D. G. Lidzey, Adv. Funct. Mater. 14, 765 (2004).
31. U. Lemmer, S. Heun, R. F. Mahrt, U. Scherf, M. Hopmeier, U. Siegner, E. O. Göbel, K. Müllen, and H. Bässler, Chem. Phys. Lett. 240, 373 (1995).
32. A. Haugeneder, U. Lemmer, and U. Scherf, Chem. Phys. Lett. 351, 354 (2002).
33. J. Lupton, Chem. Phys. Lett. 365, 366 (2002).
34. L. Romaner, G. Heimel, H. Wiesenhofer, P. S. de Freitas, U. Scherf, J.-L. Bŕdas, E. Zojer, and E. J. W. List, Chem. Mater. 16, 4667 (2004).
35. Physics of Organic Semiconductors, edited by, W. Brütting, (Wiley-VCH, Weinheim, 2005).
36. P. Frank and A. Winkler, Appl. Phys. A: Mater. Sci. Process. 90, 717 (2008).
37. A. Piaggi, G. Lanzani, G. Bongiovanni, A. Mura, W. Graupner, F. Meghdadi, G. Leising, and M. Nisoli, Phys. Rev. B 56, 10133 (1997).
38. S. Guha, J. D. Rice, Y. T. Yau, C. M. Martin, M. Chandrasekhar, H. R. Chandrasekhar, R. Guentner, P. Scanduicci de Freitas, and U. Scherf, Phys. Rev. B 67, 125204 (2003).
39. M. Ariu, G. Bongiovanni, M. A. Loi, A. Mura, A. Piaggi, L. Rossi, W. Graupner, F. Meghdadi, and G. Leising, Chem. Phys. Lett. 313, 405 (1999).
40. E. Faulques, J. Ẃry, S. Lefrant, V. G. Ivanov, and G. Jonusauskas, Phys. Rev. B 65, 212202 (2002).
41. T. Haber, A. Andreev, A. Thierry, H. Sitter, M. Oehzelt, and R. Resel, J. Cryst. Growth 284, 209 (2005).
42. T. Haber, M. Oehzelt, R. Resel, A. Andreev, A. Thierry, H. Sitter, D. M. Smilgies, B. Schaffer, W. Grogger, and R. Resel, J. Nanosci. Nanotechnol. 6, 698 (2006).
43. A. Y. Andreev, A. Montaigne, G. Hlawacek, H. Sitter, and C. Teichert, J. Vac. Sci. Technol. A 24, 1660 (2006).
44. A. Kadashchuk, Yu. Skryshevski, C. Teichert, and H. Sitter (unpublished).
45. B. Schweitzer, V. I. Arkhipov, U. Scherf, and H. Bässler, Chem. Phys. Lett. 313, 57 (1999).
46. H. Plank, R. Resel, H. Sitter, A. Andreev, N. S. Sariciftci, G. Hlawacek, C. Teichert, A. Thierry, and B. Lotz, Thin Solid Films 443, 108 (2003).
47. S. Verlaak and P. Heremans, Phys. Rev. B 75, 115127 (2007).
48. J. Ivanco, B. Winter, F. P. Netzer, and M. G. Ramsey, Adv. Mater. (Weinheim, Ger.) 15, 1812 (2003).