Nitrogen doping in low-temperature halo-carbon homoepitaxial growth of SiC

Materials Science Forum

Volumn 600-603, Issue , 2009, Pages 159-162

  Chindanon, Kritsa ^a   Lin, Huang De ^a   Melnychuk, Galyna ^a   Koshka, Yaroslav ^a  

^a MISSISSIPPI STATE UNIVERSITY   (United States)

Author keywords

Chloromethane; Donors; Doping; Halo carbon; Low temperature epitaxial growth; Nitrogen; Silicon condensation

Indexed keywords

CARBON; CONDENSATION; EPITAXIAL GROWTH; SILICON; SILICON CARBIDE; TEMPERATURE DISTRIBUTION;

CHLOROMETHANE; DONOR; HALO-CARBON; HOMOEPITAXIAL GROWTH; LOW TEMPERATURE EPITAXIAL GROWTH; LOWS-TEMPERATURES; NITROGEN INCORPORATION; NITROGEN-DOPING; SI:C RATIO; SILICON CONDENSATION;

NITROGEN;

EID: 61449154818     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.600-603.159     Document Type: Conference Paper

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