Effects of thermal annealing temperature and duration on hydrothermally grown ZnO nanorod arrays

Applied Surface Science

Volumn 255, Issue 11, 2009, Pages 5861-5865

  Zhao, X Q ^a   Kim, C R ^a   Lee, J Y ^a   Shin, C M ^a   Heo, J H ^a   Leem, J Y ^a   Ryu, H ^a   Chang, J H ^b   Lee, H C ^b   Son, C S ^c   Shin, B C ^d   Lee, W J ^d   Jung, W G ^e   Tan, S T ^f   Zhao, J L ^g   Sun, X W ^f,g  

^a Inje University   (South Korea)

^b Korea Maritime University   (South Korea)

^c Silla University   (South Korea)

^d Dong Eui University   (South Korea)

^e Kookmin University   (South Korea)

^f INSTITUTE OF MICROELECTRONICS   (Singapore)

^g NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Annealing treatment; Hydrothermal synthesis; ZnO

Indexed keywords

ANNEALING; HYDROTHERMAL SYNTHESIS; II-VI SEMICONDUCTORS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; X RAY DIFFRACTION; ZINC OXIDE;

ANNEALING TEMPERATURES; ANNEALING TREATMENTS; HYDROTHERMAL METHODS; PHOTOLUMINESCENCE MEASUREMENTS; ROOM-TEMPERATURE PHOTOLUMINESCENCE; STRUCTURAL AND OPTICAL PROPERTIES; THERMAL-ANNEALING; ZNO NANOROD ARRAYS;

NANORODS;

EID: 61449115696     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.01.022     Document Type: Article

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