Evaporation of epitaxial ZnO films during post-deposition annealing

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 6 A, 2007, Pages 3556-3559

  Kim, In Woo ^a   Lee, Kyu Mann ^b  

^a SAMSUNG Electronics   (South Korea)

^b Korea University of Technology and Education   (South Korea)

Author keywords

Annealing; Evaporation; Synchrotron X ray scattering; ZnO film

Indexed keywords

ANNEALING; EPITAXIAL GROWTH; EVAPORATION; SURFACE MORPHOLOGY; SYNCHROTRON RADIATION; X RAY SCATTERING; ZINC OXIDE;

EVAPORATION RATES; PRISM PLANES; SYNCHROTRON X RAY SCATTERING;

OXIDE FILMS;

EID: 34547838216     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.3556     Document Type: Article

References (11)

1. V. Gupta and A. Mansingh: J. Appl. Phys. 80 (1996) 1063.
2. M. K. Puchert, P. Y. Timbrell, and R. N. Lamb: J. Vac. Sci. Technol. A 14 (1996) 2220.
3. Y. Chen, H. J. Ko, S. K. Hong, and T. Yao: Appl. Phys. Lett. 76 (2000) 559.
4. D. Kohl, M. Henzler, and G. Heiland: Surf. Sci. 41 (1974) 403.
5. S. Zhu, C. H. Su, S. L. Lehoczky, M. T. Harris, M. J. Callahan, P. McCarty, and M. A. George: J. Cryst. Growth 219 (2000) 361.
6. T. Ohnishi, A. Ohtomo, I. Ohkuboa, M. Kawasaki, M. Yoshimoto, and H. Koinuma: Mater. Sci. Eng. B 56 (1998) 256.
7. S. I. Park, T. S. Cho, S. J. Doh, J. L. Lee, and J. H. Je: Appl. Phys. Lett. 77 (2000) 349.
8. C. V. Thompson: Annu. Rev. Mater. Sci. 30 (2000) 159.
9. M. Grunze, W. Hirschwald, and D. Hofmann: J. Cryst. Growth 52 (1981) 241.
10. E. Bauser and H. Strunk: Thin Solid Films 93 (1982) 185.
11. N. Fujimura, T. Nishihara, S. Goto, J. Xu, and T. Ito: J. Cryst. Growth 130 (1993) 269.