Laser activation of Ultra Shallow Junctions (USJ) doped by Plasma Immersion Ion Implantation (PIII)

Applied Surface Science

Volumn 255, Issue 10, 2009, Pages 5647-5650

  Vervisch, Vanessa ^a   Larmande, Yannick ^a   Delaporte, Philippe ^a   Sarnet, Thierry ^a   Sentis, Marc ^a   Etienne, Hasnaa ^b   Torregrosa, Frank ^b   Cristiano, Fuccio ^c   Fazzini, Pier Francesco ^d  

^a AIX MARSEILLE UNIVERSITY   (France)

^b Ion Beam Services   (France)

^c LAAS CNRS   (France)

^d CEMES CNRS   (France)

Author keywords

Laser annealing; Plasma immersion ion implantation; Ultra shallow junctions

Indexed keywords

AMORPHOUS SILICON; ANNEALING; BORON; CHEMICAL ACTIVATION; CHLORINE COMPOUNDS; DOPING (ADDITIVES); EXCIMER LASERS; FLUORINE COMPOUNDS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; ION BEAMS; IONS; LASER HEATING; OPTICAL DATA PROCESSING; PLASMA APPLICATIONS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR JUNCTIONS; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY;

ELECTRICAL CHARACTERIZATION; FOUR-POINT PROBE TECHNIQUES; LASER ANNEALING; LASER THERMAL ANNEALING; PLASMA IMMERSION ION IMPLANTATION; PRE-AMORPHIZATION IMPLANTATION; PRE-AMORPHIZED SILICON; ULTRA SHALLOW JUNCTION;

ION IMPLANTATION;

EID: 61349194397     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.11.010     Document Type: Article

References (15)

1. Torregrosa F., Laviron C., Milesi F., Hernandez M., Faik H., and Venturini J. Proc. 14th International Conference on Ion Implant Technology (2004)
2. Hernandez M., Venturini J., Zahorski D., Boulmer J., Débarre D., Kerrien G., Sarnet T., Laviron C., Semeria M.N., Camel D., and Santailler J.L. Appl. Surf. Sci. 208-209 (2003) 345-351
3. ITRS International Technology Roadmap for Semiconductors, 2007, www.itrs.net.
4. P.K. Chu, et al., Plasma doping: progress and potential, Solid State Technol. (October) (1999).
5. Lenoble D., et al. Surf. Coat. Technol. 156 (2002) 262
6. Lecoeur F., et al. Ion Implantation by plasma immersion: interest, limitations and perspectives. Surf. Coat. Technol. 125 (2000) 71-78
7. Jones K.S., Kuryliw E., Murto R., Rendon M., and Talwar S. IEEE CNF Ion Implantation Technology, (2000) 111-114
8. Laviron C., et al. Jpn. Soc. Appl. Phys. 91 (2001)
9. Fortunato G., et al. Nucl. Instrum. Methods Phys. Res. B 186 (2002) 401
10. Torregrosa F., et al. Proc. 16th International Conference on Ion Implant Technology (2006) 6
11. V. Vervisch, Thèse de 3ème cycle, Etude et réalisation de jonctions ultra fines p + n par la technique d'implantation d'ions par immersion plasma. Application aux cellules photovoltaïques, Soutenue le 11 Décembre 2007.
12. Faifer V.N., Current M.I., Wong T.M.H., and Souchkov V.S. 8th International Workshop on Fabrication Characterization and Modeling of Ultra Shallow Junctions in Semiconductors USJ 05 Daytona Beach (2005) and JVST B 24(01) (Jan/Feb 2006) 414-420
13. Faifer V.N., Shroder D.K., and Current M.I. Appl. Phys. Let. 89 (2006) 151123
14. Lide D.R. Handbook of Chemistry and Physics. 85th edition (2004/2005)
15. Felch S., Graoui H., Tsai G., and Mayur A. Nucl. Instrum. Methods. Phy. Res., Sect. B 237 (2005) 35-40