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Volumn 53, Issue 3, 2009, Pages 292-296

Gated tunnel diode in oscillator applications with high frequency tuning

Author keywords

GaAs; Pulse generator; Tunnel diode; VCO

Indexed keywords

CAPACITANCE; DIODES; GALLIUM ALLOYS; PULSE GENERATORS; SEMICONDUCTING GALLIUM; SIGNAL GENERATORS; TUNING; TUNNELS; VARIABLE FREQUENCY OSCILLATORS;

EID: 61349171843     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2008.12.009     Document Type: Article
Times cited : (14)

References (14)
  • 2
    • 0027641965 scopus 로고
    • 1.7 ps microwave, integrated-circuit-compatible InAs/AlSb resonant tunneling diodes
    • Ozbay E., Bloom D.M., Chow D.H., and Schulman J.N. 1.7 ps microwave, integrated-circuit-compatible InAs/AlSb resonant tunneling diodes. IEEE Electron Device Lett 14 8 (1993) 480-481
    • (1993) IEEE Electron Device Lett , vol.14 , Issue.8 , pp. 480-481
    • Ozbay, E.1    Bloom, D.M.2    Chow, D.H.3    Schulman, J.N.4
  • 3
    • 0027632174 scopus 로고
    • Conversion gain at 18 GHz from resonant tunneling diode mixer operated in fundamental mode
    • Hayes D.G., Higgs A.W., Wilding P.J., and Smith G.W. Conversion gain at 18 GHz from resonant tunneling diode mixer operated in fundamental mode. Electron Lett 29 15 (1993) 1370-1372
    • (1993) Electron Lett , vol.29 , Issue.15 , pp. 1370-1372
    • Hayes, D.G.1    Higgs, A.W.2    Wilding, P.J.3    Smith, G.W.4
  • 7
    • 35949010267 scopus 로고
    • 1-x As heterojunctions and high-resistance regions induced by focused Ga ion-beam implantation
    • 1-x As heterojunctions and high-resistance regions induced by focused Ga ion-beam implantation. Phys Rev B 41 (1990) 5459
    • (1990) Phys Rev B , vol.41 , pp. 5459
    • Tarucha, S.1    Hirayama, Y.2    Saku, T.3    Kimura, T.4
  • 8
    • 4744339260 scopus 로고    scopus 로고
    • Resonant tunneling permeable base transistor with high transconductance
    • Lind E., Lindström P., and Wernersson L.-E. Resonant tunneling permeable base transistor with high transconductance. IEEE Electron Device Lett 25 10 (2004) 678-680
    • (2004) IEEE Electron Device Lett , vol.25 , Issue.10 , pp. 678-680
    • Lind, E.1    Lindström, P.2    Wernersson, L.-E.3
  • 9
  • 14


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.