Design of resonant tunneling permeable base transistors

IEEE International Symposium on Compound Semiconductors, Proceedings

Volumn 2003-August, Issue , 2003, Pages 158-163

  Lindstrom P ^a   Lind, E ^a   Wernersson, L E ^a  

^a LUND UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

GEOMETRY; SEMICONDUCTOR DOPING; TRANSISTORS;

DOPING LEVELS; GATE WIRE; HIGH FREQUENCY OPERATION; PERMEABLE BASE TRANSISTORS; TUNNELING CHARACTERISTICS;

RESONANT TUNNELING;

EID: 84979220406     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISCSPC.2003.1354448     Document Type: Conference Paper

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