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Volumn 74, Issue 2, 1999, Pages 311-313

Lateral confinement in a resonant tunneling transistor with a buried metallic gate

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Indexed keywords


EID: 0000114585     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123008     Document Type: Article
Times cited : (19)

References (14)
  • 5
    • 85034539878 scopus 로고    scopus 로고
    • Ph.D. thesis, Lund
    • L.-E. Wernersson, Ph.D. thesis, Lund, 1998.
    • (1998)
    • Wernersson, L.-E.1
  • 11
    • 85034543567 scopus 로고    scopus 로고
    • note
    • Due to the Schottky depletion, we believe that the potential shape of the channel is smoothened and that the conducting area can be assumed to be circular. The rise of the measured peak voltage as compared to the expected value further indicates that the channel is depleted at small collector biases and hence a parabolic lateral potential may be used.
  • 12
    • 33749415029 scopus 로고
    • See, for instance, B. Su, V. J. Goldman, and J. E. Cunningham, Phys. Rev. B 46, 7644 (1991); P. H. Beton, M. W. Dellow, P. C. Main, L. Eaves, and M. Heinini, ibid. 49, 2261 (1994).
    • (1991) Phys. Rev. B , vol.46 , pp. 7644
    • Su, B.1    Goldman, V.J.2    Cunningham, J.E.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.