AlN:Cr thin films synthesized by pulsed laser deposition: Studies by X-ray diffraction and spectroscopic ellipsometry

Applied Surface Science

Volumn 255, Issue 10, 2009, Pages 5271-5274

  Szekeres, A ^a   Bakalova, S ^a   Grigorescu, S ^b   Cziraki, A ^c   Socol, G ^b   Ristoscu, C ^b   Mihailescu, I N ^b  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

^b NATIONAL INSTITUTE FOR LASER   (Romania)

^c EÖTVÖS LORÁND UNIVERSITY   (Hungary)

Author keywords

Compressive stress in PLD films; Cr doped AlN films; Optical characteristics of AlN films; Spectroscopic ellipsometry

Indexed keywords

ALUMINUM ALLOYS; ALUMINUM NITRIDE; AMORPHOUS FILMS; COMPRESSIVE STRESS; CRYSTAL ATOMIC STRUCTURE; FOURIER TRANSFORM INFRARED SPECTROSCOPY; III-V SEMICONDUCTORS; PROTACTINIUM; PULSED LASER DEPOSITION; PULSED LASERS; REFRACTIVE INDEX; SILICON WAFERS; SPECTROSCOPIC ELLIPSOMETRY; THIN FILMS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

ALN FILMS; ALN THIN FILMS; AMORPHOUS MATRICES; DYNAMIC PRESSURES; PLD FILMS; RESIDUAL PRESSURES; SPECTRAL REGION; WEAK ABSORPTION;

OPTICAL FILMS;

EID: 61349103684     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.08.104     Document Type: Article

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