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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 2 B, 2001, Pages 1056-1060

Characteristics of (Cr1-x, Alx)N films prepared by pulsed laser deposition

(6) Hirai, M a Ueno, Y a Suzuki, T a Jiang, W a Grigoriu, C a Yatsui, K a

a NAGAOKA UNIVERSITY OF TECHNOLOGY (Japan)

Author keywords

(Cr1 x, Alx)N; Film; Hardness; Oxidation; Phase transition; Psuedobinary nitride

Indexed keywords

ANNEALING; CHROMIUM COMPOUNDS; CRYSTAL STRUCTURE; ENERGY DISPERSIVE SPECTROSCOPY; HARDNESS; OXIDATION; PHASE TRANSITIONS; PULSED LASER DEPOSITION; RUTHERFORD BACKSCATTERING SPECTROSCOPY;

CHROMIUM ALUMINUM NITRIDE FILM;

THIN FILMS;

EID: 0035245531 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.40.1056 Document Type: Article

Times cited : (60)

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