Effect of oxygen partial pressure on properties of ITO films deposited by reactive thermal deposition technique

Guangdianzi Jiguang/Journal of Optoelectronics Laser

Volumn 20, Issue 1, 2009, Pages 44-48

  Cao, Li Ran ^a   Chen, Xin Liang ^a   Xue, Jun Ming ^a   Zhang, De Kun ^a   Sun, Jian ^a   Zhao, Ying ^a   Geng, Xin Hua ^a  

^a NANKAI UNIVERSITY   (China)

Author keywords

ITO; Oxygen partial pressure; Reactive thermal deposition; Scattering mechanism

Indexed keywords

CRYSTAL STRUCTURE; DOPING (ADDITIVES); ELECTRIC PROPERTIES; OXIDE FILMS; OXYGEN; PARTIAL PRESSURE; POSITIVE IONS; PRESSURE EFFECTS; SCATTERING; TIN; TITANIUM COMPOUNDS;

DOPING EFFECTS; EFFECT OF OXYGENS; ITO; ITO FILMS; MICRO-STRUCTURAL; NEAR INFRA-RED REGIONS; NEUTRAL PARTICLES; OPTICAL AND ELECTRICAL PROPERTIES; OXYGEN PARTIAL PRESSURE; REACTIVE THERMAL DEPOSITION; SCATTERING MECHANISM; TIN DOPED INDIUM OXIDE FILMS; XRD SPECTRUM;

OXYGEN VACANCIES;

EID: 61349084910     PISSN: 10050086     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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